1999. 11. 30 1/2 semiconductor technical data mmbta517 epitaxial planar npn transistor revision no : 3 general purpose high darlington transistor. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) * : package mounted on 99.5% alumina 10 8 0.6mm. characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =0.1ma 40 - - v collector-emitter breakdown voltage v (br)ceo i c =10ma 30 - - v emitter-base breakdown voltage v (br)ebo i e =-1.0ma 10 - - v collector cut-off current i cbo v cb =40v - - 1 a emitter cut-off current i ebo v eb =10v - - 1 a dc current gain h fe i c =100ma, v ce =2v 30k - - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =1ma - - 1 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma - 1.5 2 v current gain bandwidth product f t i c =100ma, f=100mhz, v ce =2v - 220 - mhz collector output capacitance c ob v cb =10v, f=1mhz - 5 - pf characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 10 v collector current i c 400 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature t stg -55 150
1999. 11. 30 2/2 mmbta517 revision no : 3
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